MIL-HDBK-103AA
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来源:标准资料网
MIL-HDBK-103AA, DEPARTMENT OF DEFENSE HANDBOOK: LIST OF STANDARD MICROCIRCUIT DRAWINGS (19 SEP 2007)., The Standard Microcircuit Drawing Program (SMDP) is directly under the auspices of the DoD Parts Management Program (PMP). The PMP is implemented by MIL-HDBK-512, "Parts Management." The PMP will be the avenue for screening candidate parts for the SMDP by the DSCC Military Parts Control Advisory Group (MPCAG).
基本信息
| 标准名称： | 钥匙铣槽机 |
| 中标分类： |
轻工、文化与生活用品 >>
轻工机械 >>
五金制品、家用电器用机械 |
| 发布部门： | 中华人民共和国轻工业部 |
| 发布日期： | 1991-03-30 |
| 实施日期： | 1991-12-01 |
| 首发日期： | 1900-01-01 |
| 作废日期： | 1900-01-01 |
| 提出单位： | 全国轻工机械标准化技术委员会 |
| 归口单位： | 全国轻工机械标准化中心 |
| 起草单位： | 烟台造锁设备厂 |
| 起草人： | 刘义衡，才瑞杰 |
| 出版社： | 中国轻工业出版社 |
| 出版日期： | 1991-12-01 |
| 页数： | 8页 |
适用范围
本标准规定了钥匙铣槽机的产品分类、技术要求、试验方法、检验规则、标志、包装、运翰、贮存等要求。
本标准适用于加工长度为40mm以下的双轴YS-1017型钥匙铣槽机(以下简称铣槽机)。其它类型的铣槽机亦可参照采用。
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所属分类： 轻工 文化与生活用品 轻工机械 五金制品 家用电器用机械
【英文标准名称】:StandardPracticeforCharacterizingNeutronFluenceSpectrainTermsofanEquivalentMonoenergeticNeutronFluenceforRadiation-HardnessTestingofElectronics
【原文标准名称】:确定电子辐射强度试验用等效单能级中子流量的能级中中子流量能谱的特征的标准实施规程
【标准号】:ASTME722-2009e1
【标准状态】:现行
【国别】:美国
【发布日期】:2009
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:E10.07
【标准类型】:(Practice)
【标准水平】:()
【中文主题词】:
【英文主题词】:displacementdamage;electronichardness;galliumarsenide;hardnessparameter;silicon;silicondamage;siliconequivalentdamage(SED);1&x2013;MeVequivalentfluence;Displacement--electronicmaterials/applications;
【摘要】:Thispracticeisimportantincharacterizingtheradiationhardnessofelectronicdevicesirradiatedbyneutrons.Thischaracterizationmakesitfeasibletopredictsomechangesinoperationalpropertiesofirradiatedsemiconductordevicesorelectronicsystems.Tofacilitateuniformityoftheinterpretationandevaluationofresultsofirradiationsbysourcesofdifferentfluencespectra,itisconvenienttoreducetheincidentneutronfluencefromasourcetoasingleparameterx2014;anequivalentmonoenergeticneutronfluencex2014;applicabletoaparticularsemiconductormaterial.Inordertodetermineanequivalentmonoenergeticneutronfluence,itisnecessarytoevaluatethedisplacementdamageoftheparticularsemiconductormaterial.Ideally,thisquantityiscorrelatedtothedegradationofaspecificfunctionalperformanceparameter(suchascurrentgain)ofthesemiconductordeviceorsystembeingtested.However,thiscorrelationhasnotbeenestablishedunequivocallyforalldevicetypesandperformanceparameterssince,inmanyinstances,othereffectsalsocanbeimportant.Ionizationeffectsproducedbytheincidentneutronfluenceorbygammaraysinamixedneutronfluence,short-termandlong-termannealing,andotherfactorscancontributetoobservedperformancedegradation(damage).Thus,cautionshouldbeexercisedinmakingacorrelationbetweencalculateddisplacementdamageandperformancedegradationofagivenelectronicdevice.Thetypesofdevicesforwhichthiscorrelationisapplicable,andnumericalevaluationofdisplacementdamagearediscussedintheannexes.Theconceptof1-MeVequivalentfluenceiswidelyusedintheradiation-hardnesstestingcommunity.Ithasmeritsanddisadvantagesthathavebeendebatedwidely(9-12).Forthesereasons,specificsofastandardapplicationofthe1-MeVequivalentfluencearepresentedintheannexes.1.1Thispracticecoversproceduresforcharacterizingneutronfluencefromasourceintermsofanequivalentmonoenergeticneutronfluence.Itisapplicabletoneutroneffectstesting,tothedevelopmentoftestspecifications,andtothecharacterizationofneutrontestenvironments.Thesourcesmayhaveabroadneutron-energyrange,ormaybemono-energeticneutronsourceswithenergiesupto20MeV.Thispracticeisnotapplicableincaseswherethepredominantsourceofdisplacementdamageisfromneutronsofenergylessthan10keV.Therelevantequivalenceisintermsofaspecifiedeffectoncertainphysicalpropertiesofmaterialsuponwhichthesourcespectrumisincident.Inordertoachievethis,knowledgeoftheeffectsofneutronsasafunctionofenergyonthespecificpropertyofthematerialofinterestisrequired.Sharpvariationsintheeffectswithneutronenergymaylimittheusefulnessofthispracticeinthecaseofmono-energeticsources.1.2Thispracticeispresentedinamannertobeofgeneralapplicationtoavarietyofmaterialsandsources.Correlationbetweendisplacements(1-3)causedbydifferentparticles(electrons,neutrons,protons,andheavyions)isbeyondthescopeofthispractice.Inradiation-hardnesstestingofelectronicsemiconductordevices,specificmaterialsofinterestincludesiliconandgalliumarsenide,andtheneutronsourcesgenerallyaretestandresearchreactorsandcalifornium-252irradiators.1.3Thetechniqueinvolvedreliesonthefollowingfactors:(1)adetaileddeterminationofthefluencespectrumoftheneutronsource,and(2)aknowledgeofthedegradation(damage)effectsofneutronsasafunctionofenergyonspecificmaterialproperties.1.4Thedetaileddeterminationoft......
【中国标准分类号】:A58
【国际标准分类号】:31_080_01
【页数】:27P.;A4
【正文语种】:英语
